Former Samsung engineer accused of giving 10nm DRAM data to China’s CXMT, handwritten notes detailed over 600 process steps — gas flow ratios, photoresist settings and more critical stages detailed

Last week, South Korean prosecutors indicted multiple individuals in a case alleging that a former Samsung engineer leaked advanced DRAM manufacturing process data to China’s ChangXin Memory Technologies (CXMT), shedding light on how leaked trade secrets may have accelerated China’s push into 10nm-class memory. Now, it has come to light (via SemiAnalysis) that the engineers in question allegedly took note of detailed critical manufacturing steps in handwritten notes taken over five years.

The…