Micron has confirmed it will partner with TSMC to manufacture the base logic die for its next-generation HBM4E memory, with production targeted for 2027. The announcement, made during the company’s fiscal Q4 earnings call on September 23, adds yet more detail to an already busy roadmap.
Micron is shipping early HBM4 samples at speeds above 11 Gbps per pin, providing up to 2.8TB/s of bandwidth, and it has already locked down most of its 2026 HBM3E supply agreements. But the big takeaway is that Micron…








